Manufacturer Part Number
IPD50R800CE
Manufacturer
Infineon Technologies
Introduction
Discrete semiconductor product
Single transistor, FET, MOSFET
Product Features and Performance
N-Channel MOSFET
500V Drain-Source Voltage
800mΩ On-Resistance
6A Continuous Drain Current
Wide Operating Temperature Range: -55°C to 150°C
Low Input Capacitance: 280pF
60W Power Dissipation
Product Advantages
Efficient power conversion with low on-resistance
Reliable high-voltage operation
Compact surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 800mΩ
Continuous Drain Current (Id): 7.6A
Input Capacitance (Ciss): 280pF
Power Dissipation (Tc): 60W
Quality and Safety Features
MOSFET technology for reliable performance
Complies with safety and quality standards
Compatibility
Suitable for various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Reliable high-voltage operation
Compact surface-mount package
Wide operating temperature range
Complies with safety and quality standards
Suitable for diverse power conversion and control applications
