Manufacturer Part Number
IPD50R520CP
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-Channel MOSFET transistor from Infineon's CoolMOS CP series.
Product Features and Performance
Drain-Source Voltage (Vdss) of 500V
On-State Resistance (Rds(on)) of 520mΩ @ 3.8A, 10V
Continuous Drain Current (Id) of 7.1A @ 25°C
Input Capacitance (Ciss) of 680pF @ 100V
Power Dissipation (Pd) of 66W @ Tc
Product Advantages
Excellent energy efficiency due to low on-state resistance
High voltage handling capability
High current capability
Compact surface mount package
Key Technical Parameters
N-Channel MOSFET
Vgs(th) Max of 3.5V @ 250A
Gate Charge (Qg) Max of 17nC @ 10V
Operating Temperature Range of -55°C to 150°C
Quality and Safety Features
Robust package design for reliable operation
Compliant with relevant safety standards
Compatibility
This MOSFET is compatible with a wide range of power electronic applications that require high voltage, high current, and high efficiency switching.
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacement or upgrade options may be available from Infineon.
Key Reasons to Choose This Product
Excellent energy efficiency due to low on-state resistance, reducing power losses and improving overall system performance.
High voltage and current handling capabilities, allowing for use in a wide range of power electronic applications.
Compact surface mount package, enabling efficient board space utilization.
Robust design and compliance with safety standards, ensuring reliable and safe operation.
Ongoing support and availability from Infineon, a leading manufacturer of power semiconductor solutions.
IPD50R380CFINF