Manufacturer Part Number
IPD50R500CE
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with CoolMOS CE technology for efficient power conversion applications.
Product Features and Performance
Extremely low on-state resistance (RDS(on)) for high efficiency
High-voltage capability up to 500V
Optimized gate charge (Qg) for fast switching
Wide operating temperature range from -55°C to 150°C
Robust and reliable design
Product Advantages
Excellent efficiency and power density
High power handling capability
Fast and efficient switching
Wide temperature range suitability
Robust and durable construction
Key Technical Parameters
Drain-Source Voltage (VDS): 500V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 500mΩ @ 2.3A, 13V
Continuous Drain Current (ID): 7.6A @ 25°C
Input Capacitance (Ciss): 433pF @ 100V
Power Dissipation (Ptot): 57W @ Tc
Quality and Safety Features
Meets relevant safety and quality standards
Robust and reliable design for long-term use
Compatibility
Suitable for a wide range of power conversion applications, including:
- Switch-mode power supplies
- Motor drives
- Inverters
- Industrial electronics
Application Areas
Power conversion
Motor control
Industrial electronics
Renewable energy systems
Product Lifecycle
Currently in active production
No plans for discontinuation in the near future
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent efficiency and power density
High-voltage capability up to 500V
Fast and efficient switching for improved performance
Wide operating temperature range for versatile applications
Robust and reliable design for long-term use
