Manufacturer Part Number
IPD50R500CEAUMA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a transistor - FET (Field-Effect Transistor), MOSFET (Metal-Oxide-Semiconductor FET) - Single.
Product Features and Performance
N-Channel MOSFET
500V Drain-to-Source Voltage
±20V Gate-to-Source Voltage
500mΩ maximum On-Resistance
6A continuous drain current at 25°C
433pF maximum input capacitance
57W maximum power dissipation
-55°C to 150°C operating temperature range
Product Advantages
High voltage and low on-resistance for efficient power conversion
CoolMOS CE technology for improved efficiency and thermal performance
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 500mΩ @ 2.3A, 13V
Drain Current (Id): 7.6A (Tc)
Input Capacitance (Ciss): 433pF @ 100V
Power Dissipation (Pd): 57W (Tc)
Threshold Voltage (Vgs(th)): 3.5V @ 200A
Gate Charge (Qg): 18.7nC @ 10V
Quality and Safety Features
RoHS3 compliant
Housed in a PG-TO252-3 (D-Pak) surface mount package
Compatibility
This MOSFET is compatible with a wide range of power electronic applications.
Application Areas
Switch-mode power supplies
Power factor correction circuits
Motor drives
Industrial automation equipment
Household appliances
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power conversion
CoolMOS CE technology for improved efficiency and thermal performance
Suitable for a wide range of power applications
Robust and reliable design
RoHS3 compliance for environmental friendliness