Manufacturer Part Number
IPD50R520CPATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a discrete semiconductor device, specifically a transistor with a field-effect transistor (FET) structure. It belongs to the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) category.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 500 V
Maximum Gate-Source Voltage (Vgs) of ±20 V
On-State Resistance (Rds(on)) of 520 mΩ at 3.8 A, 10 V
Continuous Drain Current (Id) of 7.1 A at 25°C (Tc)
Input Capacitance (Ciss) of 680 pF at 100 V
Maximum Power Dissipation of 66 W at Tc
Product Advantages
High voltage rating of 500 V
Low on-state resistance for high efficiency
Suitable for high power, high frequency switching applications
Reliable and robust design
Key Technical Parameters
MOSFET technology
Surface mount package (TO-252-3, D-Pak)
Operating temperature range of -55°C to 150°C (Tj)
RoHS3 compliant
Quality and Safety Features
Meets RoHS3 (Restriction of Hazardous Substances) requirements
Reliable and durable design for long-term performance
Compatibility
This MOSFET is compatible with a wide range of power electronics and switching applications.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Product Lifecycle
This product is an active and currently available part from Infineon Technologies. No information is provided about any upcoming discontinuation or availability of replacements/upgrades.
Key Reasons to Choose This Product
High voltage rating of 500 V, suitable for demanding power applications
Low on-state resistance for high efficiency and reduced power losses
Reliable and robust design for long-term performance
Wide operating temperature range of -55°C to 150°C (Tj)
RoHS3 compliance for environmental responsibility
Surface mount package for easy integration into power electronics designs
