Manufacturer Part Number
IPD50R1K4CEBTMA1
Manufacturer
Infineon Technologies
Introduction
This is a discrete semiconductor product, specifically a transistor - FET, MOSFET - single.
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Drain to source voltage (Vdss): 500 V
Maximum gate-to-source voltage (Vgs): ±20 V
Maximum on-state resistance (Rds(on)): 1.4 Ω @ 900 mA, 13 V
Continuous drain current (Id) @ 25°C (Tc): 3.1 A
Input capacitance (Ciss) (max) @ 100 V: 178 pF
Maximum power dissipation (Tc): 25 W
N-channel MOSFET
Maximum threshold voltage (Vgs(th)) @ 70 A: 3.5 V
Drive voltage (max Rds(on), min Rds(on)): 13 V
Maximum gate charge (Qg) @ 10 V: 1 nC
Product Advantages
High voltage capability
Low on-state resistance
High continuous drain current
Key Technical Parameters
Manufacturer Part Number: IPD50R1K4CEBTMA1
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Series: CoolMOS CE
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Quality and Safety Features
Designed and manufactured by Infineon Technologies, a reputable semiconductor company
Compatibility
This MOSFET is compatible with a wide range of electronic circuits and systems that require a high-voltage, low-resistance switching device.
Application Areas
Suitable for use in power supplies, motor drives, and other power electronics applications.
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies or other MOSFET manufacturers.
Several Key Reasons to Choose This Product
High voltage capability (500 V)
Low on-state resistance (1.4 Ω)
High continuous drain current (3.1 A)
Wide operating temperature range (-55°C to 150°C)
Manufactured by a reputable semiconductor company (Infineon Technologies)
Surface mount package for easy integration into electronic circuits
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