Manufacturer Part Number
IPD50P04P4L11ATMA2
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance P-channel MOSFET from Infineon Technologies, part of the OptiMOS-P2 series.
Product Features and Performance
40V Drain-Source Voltage (Vdss)
50A Continuous Drain Current (Id) at 25°C
Low On-Resistance (Rds(on)) of 10.6mΩ at 50A and 10V
Wide Operating Temperature Range of -55°C to 175°C
High Input Capacitance (Ciss) of 3900pF at 25V
Maximum Power Dissipation of 58W at Tc
Product Advantages
Excellent power efficiency due to low Rds(on)
Robust design with high temperature capability
Suitable for a wide range of power conversion applications
Key Technical Parameters
Vgs(th) (Max): 2.2V @ 85A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Gate Charge (Qg) (Max): 59nC @ 10V
Quality and Safety Features
RoHS3 Compliant
PG-TO252-3-313 Packaging
Compatibility
This MOSFET is compatible with a wide range of power electronics applications.
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicles
Industrial automation
Product Lifecycle
The IPD50P04P4L11ATMA2 is an active product from Infineon Technologies. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent power efficiency and performance
Wide operating temperature range
Robust and reliable design
Suitable for a variety of power conversion applications
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