Manufacturer Part Number
IPD50P04P4L11ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance P-channel power MOSFET transistor
Designed for automotive and industrial applications
Product Features and Performance
Wide operating temperature range: -55°C to 175°C
Low on-resistance (Rds(on)) for high efficiency
High continuous drain current: 50A @ 25°C
Low gate charge for fast switching
Low input capacitance for high-speed operation
Product Advantages
Excellent thermal performance and power handling
Robust design for demanding automotive environments
Supports high-frequency switching applications
Optimized for efficient power conversion and control
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 10.6mΩ @ 50A, 10V
Input Capacitance (Ciss): 3900pF @ 25V
Power Dissipation (Tc): 58W
Quality and Safety Features
RoHS3 compliant
Automotive-qualified for reliable operation
Compatibility
Compatible with various automotive and industrial applications
Application Areas
Automotive electronics (e.g., engine control, lighting, infotainment)
Industrial power conversion and control systems
General-purpose high-power switching applications
Product Lifecycle
This is a current and actively supported product from Infineon Technologies.
Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose This Product
Excellent thermal and electrical performance for high-power applications
Robust and reliable design for demanding automotive and industrial environments
Optimized for efficient power conversion and control in high-frequency switching applications
Automotive-qualified for use in safety-critical automotive systems
Backed by Infineon Technologies' expertise in power semiconductor technologies
IPD50P04P04-11INF
IPD50P04P4L-114P04L11Cypress Semiconductor (Infineon Technologies)