Manufacturer Part Number
IPD50R280CEAUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high-voltage capability.
Product Features and Performance
Low on-resistance (280 mOhm) for high efficiency
High drain-to-source voltage (500 V) for high-voltage applications
High continuous drain current (13 A) for high-power applications
Low input capacitance (773 pF) for fast switching
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent energy efficiency due to low on-resistance
High voltage and current capability for use in demanding applications
Fast switching performance for high-frequency circuits
Wide temperature tolerance for reliable operation in diverse environments
Key Technical Parameters
Drain-to-source voltage (Vdss): 500 V
Gate-to-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 280 mOhm
Continuous drain current (Id): 13 A
Input capacitance (Ciss): 773 pF
Power dissipation (Pd): 119 W
Quality and Safety Features
RoHS3 compliant for environmental responsibility
MOSFET technology for reliable and robust performance
Compatibility
Surface mount package (TO-252-3, D-Pak) for easy PCB integration
Application Areas
High-voltage, high-power switching applications
Power supplies, motor drives, and other industrial electronics
Automotive and renewable energy systems
Product Lifecycle
Current product offering, not nearing discontinuation
Replacements and upgrades available from Infineon
Key Reasons to Choose
Excellent energy efficiency and thermal performance
High voltage and current handling capabilities
Fast switching speed for high-frequency applications
Proven reliability and quality from Infineon Technologies
IPD50R380CFINF