Manufacturer Part Number
IPD50P04P413ATMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
P-Channel MOSFET
40V Drain to Source Voltage
±20V Gate to Source Voltage
6mOhm On-Resistance @ 50A, 10V
50A Continuous Drain Current @ 25°C
3670pF Input Capacitance @ 25V
58W Power Dissipation @ Tc
4V Gate Threshold Voltage @ 85A
51nC Gate Charge @ 10V
Product Advantages
Optimized performance with low on-resistance
Wide operating temperature range (-55°C to 175°C)
Suitable for high-current switching applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Packaging: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3-313
Series: OptiMOS
Package: Tape & Reel (TR)
Application Areas
Suitable for high-current switching applications, such as motor drives, power supplies, and industrial controls.
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
Optimized performance with low on-resistance
Wide operating temperature range
Suitable for high-current switching applications
RoHS3 compliant
Reliable and well-established Infineon Technologies brand