Manufacturer Part Number
IPD50P03P4L11ATMA1
Manufacturer
Infineon Technologies
Introduction
Infineon's IPD50P03P4L11ATMA1 is a high-performance P-channel MOSFET transistor designed for various power management and switching applications.
Product Features and Performance
30V drain-source voltage (Vdss)
50A continuous drain current (Id) at 25°C
5mΩ maximum on-resistance (Rds(on)) at 50A, 10V
Wide operating temperature range of -55°C to 175°C
Fast switching performance with low gate charge (55nC at 10V)
Compact TO-252-3 (DPAK) package
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Wide temperature tolerance
Compact and space-saving package
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): +5V/-16V
On-Resistance (Rds(on)): 10.5mΩ @ 50A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 3770pF @ 25V
Power Dissipation (Tc): 58W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power management, motor control, and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power efficiency and high current capability
Wide operating temperature range
Compact and space-saving package
Reliable and high-quality design
Suitable for a variety of power management and switching applications
IPD50P04P04-11INF