Manufacturer Part Number
IPD50N10S3L16ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for power conversion and control applications
Product Features and Performance
100V drain-to-source voltage
50A continuous drain current
Low on-resistance of 15mΩ @ 50A, 10V
High power density with 100W power dissipation
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 4180pF @ 25V
Fast switching performance with low gate charge of 64nC @ 10V
Product Advantages
Excellent efficiency and power density
Robust design for high reliability
Optimized for switching applications
Key Technical Parameters
Drain-to-source voltage: 100V
Maximum gate-to-source voltage: ±20V
On-resistance: 15mΩ @ 50A, 10V
Continuous drain current: 50A
Power dissipation: 100W
Gate charge: 64nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Compatible with a wide range of power conversion and control systems
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density for high-performance applications
Robust design for reliable operation in harsh environments
Optimized for fast switching applications with low gate charge and input capacitance
Wide operating temperature range and RoHS3 compliance for versatile use
Compatibility with a broad range of power conversion and control systems