Manufacturer Part Number
IPD50N06S4L12ATMA2
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for automotive and industrial applications
Product Features and Performance
Optimized for low on-resistance and high-speed switching
Capable of handling high currents up to 50A
Operates across a wide temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
Robust design for harsh automotive and industrial environments
Reliable performance and long lifespan
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
On-Resistance (Rds(on)): 12mΩ
Continuous Drain Current (Id): 50A
Input Capacitance (Ciss): 2890pF
Power Dissipation (Pd): 50W
Quality and Safety Features
Compliant with RoHS3 directive
Qualified to the AEC-Q101 standard for automotive applications
Robust package design (TO-252-3, DPak)
Compatibility
Suitable for a variety of automotive and industrial applications
Can be used in power conversion, motor control, and switching circuits
Application Areas
Automotive systems (e.g., powertrain, body electronics)
Industrial power electronics (e.g., motor drives, power supplies)
General-purpose switching and power management applications
Product Lifecycle
Currently in active production
No plans for discontinuation, with availability of replacements and upgrades
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust design for harsh environments
Comprehensive automotive and industrial qualifications
Long-term availability and support from Infineon
IPD50N06S4-09INF