Manufacturer Part Number
IPD50N06S409ATMA2
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET for automotive and industrial applications
Product Features and Performance
High power density and efficient switching performance
Low on-state resistance (RDS(on)) for low conduction losses
Improved ruggedness and reliability
Optimized for high-frequency switching applications
Suitable for a wide range of operating temperatures (-55°C to 175°C)
Product Advantages
Excellent thermal management
Robust and reliable operation
High efficiency and low power dissipation
Versatile use in various automotive and industrial applications
Key Technical Parameters
Drain-to-Source Voltage (VDS): 60V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 9mΩ @ 50A, 10V
Continuous Drain Current (ID): 50A @ 25°C
Input Capacitance (Ciss): 3785pF @ 25V
Power Dissipation (Tc): 71W
Quality and Safety Features
RoHS3 compliant
Automotive-qualified to AEC-Q101 standard
Optimized for high reliability and durability
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Automotive: Engine control, transmission control, power steering, etc.
Industrial: Motor drives, power supplies, switch-mode power supplies, etc.
Product Lifecycle
This product is currently in active production and availability is good.
Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Excellent thermal management and high power density
Robust and reliable performance across a wide temperature range
High efficiency and low power dissipation for improved energy savings
Automotive-qualified and suitable for various industrial applications
Optimized for high-frequency switching and demanding operating conditions