Manufacturer Part Number
IPD50N06S2L13ATMA2
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-channel MOSFET from Infineon Technologies, part of the OptiMOS series. It is designed for a variety of power conversion and control applications.
Product Features and Performance
55V Drain-to-Source Voltage (Vdss)
7mΩ On-Resistance (Rds(on)) at 34A, 10V
50A Continuous Drain Current (Id) at 25°C
-55°C to 175°C Operating Temperature Range
Low Input Capacitance (Ciss) of 1800pF at 25V
High Power Dissipation of 136W at Tc
Product Advantages
Excellent performance in power conversion and control applications
Low on-resistance for high efficiency
Wide operating temperature range
Robust and reliable design
Key Technical Parameters
FET Type: N-Channel MOSFET
Vgs(th) (Max): 2V at 80A
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Gate Charge (Qg) (Max): 69nC at 10V
Quality and Safety Features
RoHS3 compliant
Produced in a quality-certified manufacturing process
Compatibility
This MOSFET is suitable for a wide range of power conversion and control applications, including switching power supplies, motor drives, and industrial automation.
Application Areas
Switching Power Supplies
Motor Drives
Industrial Automation
Power Conversion and Control
Product Lifecycle
This product is currently in active production and widely available. There are no known plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance
Wide operating temperature range for reliable operation
Robust and reliable design for long-term use
Compatibility with a wide range of power conversion and control applications
Readily available and supported by a reputable manufacturer, Infineon Technologies.
IPD50N06S4-09INF