Manufacturer Part Number
IPD50N04S4L08ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a single N-channel MOSFET transistor from Infineon's OptiMOS series, designed for automotive and industrial applications.
Product Features and Performance
40V Drain-Source Voltage (Vdss)
50A Continuous Drain Current (Id) at 25°C
3mΩ Maximum On-Resistance (Rds(on)) at 50A, 10V
2340pF Maximum Input Capacitance (Ciss) at 25V
46W Maximum Power Dissipation at Tc
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Automotive-grade quality and reliability
Suitable for high-frequency switching applications
Key Technical Parameters
N-Channel MOSFET
40V Drain-Source Voltage
+20V/-16V Gate-Source Voltage
2V Maximum Gate Threshold Voltage at 17A
30nC Maximum Gate Charge at 10V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
TO-252-3 (D-Pak) package
Surface mount design
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Switched-mode power supplies
Product Lifecycle
This product is an active and widely available part from Infineon
No known plans for discontinuation or replacement at this time
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance
Robust design and automotive-grade quality
Suitable for high-current, high-frequency switching applications
Wide operating temperature range for versatile use cases
IPD50N06L13INFIN