Manufacturer Part Number
IPD50N04S408ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET optimized for switching applications
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Excellent RDS(on) x A performance
Low gate charge and input capacitance for fast switching
40V breakdown voltage
Wide operating temperature range of -55°C to 175°C
Product Advantages
Efficient power conversion
Improved system reliability
Space-saving design
Wide application versatility
Key Technical Parameters
Drain-Source Voltage (VDS): 40V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 7.9mΩ @ 50A, 10V
Continuous Drain Current (ID): 50A @ 25°C
Input Capacitance (Ciss): 1780pF @ 6V
Power Dissipation (Ptot): 46W
Quality and Safety Features
RoHS3 compliant
High-quality packaging (PG-TO252-3-313)
Compatibility
Suitable for a wide range of switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial automation
Automotive electronics
Product Lifecycle
Current product, no plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Excellent power efficiency and performance
Fast switching capability for high-frequency applications
Reliable and robust design for demanding environments
Wide range of operating temperatures
Space-saving surface-mount package
Supports a variety of power conversion and control applications
IPD50N06L13INFIN