Manufacturer Part Number
IPD50N04S410ATMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-channel MOSFET transistor suitable for various power management and switching applications.
Product Features and Performance
Drain-to-Source Voltage (Vdss): 40V
Continuous Drain Current (Id) @ 25°C: 50A
On-State Resistance (Rds(on)) @ 50A, 10V: 9.3mΩ
Input Capacitance (Ciss) @ 25V: 1430pF
Maximum Power Dissipation @ Tc: 41W
Wide Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent energy efficiency due to low on-state resistance
Robust design with high voltage and current handling capability
Compact and optimized package for improved thermal performance
Suitable for high-frequency switching applications
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)) @ 15A: 4V
Gate-Source Voltage (Vgs) Range: ±20V
Gate Charge (Qg) @ 10V: 18.2nC
Quality and Safety Features
RoHS3 compliant
Conformity to industry standards for quality and reliability
Compatibility
This MOSFET is compatible with a wide range of power management and switching applications, including:
Power supplies
Motor drives
Inverters
Converters
Application Areas
Power management
Motor control
Industrial electronics
Automotive electronics
Product Lifecycle
This product is an active and widely available part in Infineon's OptiMOS series. There are no plans for discontinuation, and replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses due to the low on-state resistance
Robust and reliable design with high voltage and current handling capabilities
Compact and optimized package for improved thermal performance and integration
Suitable for high-frequency switching applications with the fast switching characteristics
Wide operating temperature range, making it suitable for various environmental conditions
RoHS3 compliance for environmentally friendly applications
IPD50N06L13INFIN