Manufacturer Part Number
IPD50N06S2-14
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with low on-resistance and high-speed switching capability.
Product Features and Performance
Low on-resistance of 14.4 mΩ at 32 A, 10 V
High continuous drain current of 50 A at 25°C
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 1485 pF at 25 V
Fast switching speed with a maximum gate charge of 52 nC at 10 V
Product Advantages
Efficient power conversion and management
Reliable operation in high-temperature environments
Compact surface-mount package for space-saving design
Suitable for a wide range of power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 55 V
Gate to Source Voltage (Vgs Max): ±20 V
Power Dissipation (Max): 136 W at Tc
Vgs(th) (Max) @ Id: 4 V at 80 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Quality and Safety Features
Robust design for reliable operation
Compliance with industry safety standards
Compatibility
Suitable for a wide range of power electronics applications, including power supplies, motor drives, and industrial automation.
Application Areas
Power conversion and control
Motor drives
Industrial electronics
Power management systems
Product Lifecycle
This product is currently in production and not near discontinuation.
Replacement or upgrade options may be available from the manufacturer or other suppliers.
Several Key Reasons to Choose This Product
Excellent performance with low on-resistance and high current capability
Wide operating temperature range for reliable operation in harsh environments
Compact surface-mount package for space-saving design
Suitable for a wide range of power electronics applications
Robust design and compliance with industry safety standards
Availability of replacement or upgrade options from the manufacturer or other suppliers
IPD50N06S3L-13Cypress Semiconductor (Infineon Technologies)