Manufacturer Part Number
IPD50N04S308ATMA1
Manufacturer
Infineon Technologies
Introduction
The IPD50N04S308ATMA1 is a high-performance N-channel MOSFET from Infineon Technologies, suitable for a wide range of power conversion and control applications.
Product Features and Performance
40V Drain-Source Voltage
50A Continuous Drain Current at 25°C
5mΩ Maximum On-Resistance
2350pF Maximum Input Capacitance
68W Maximum Power Dissipation
Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent efficiency and low power losses
High current handling capability
Compact and thermally efficient DPak package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 7.5mΩ
Continuous Drain Current (Id): 50A
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Battery management systems
Industrial automation and control
Product Lifecycle
Currently in production
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High efficiency and low power losses for improved system performance
Excellent current handling capability for high-power applications
Compact and thermally efficient package for space-constrained designs
Suitable for high-frequency switching applications
Reliable and robust design for long-term operation
