Manufacturer Part Number
IPD50N03S4L06ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET designed for automotive and industrial applications
Product Features and Performance
Automotive-grade AEC-Q101 qualified
Low on-resistance for high efficiency
Low gate charge for fast switching
High power density
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent thermal and electrical performance
Robust and reliable for demanding applications
Optimized for fast switching and high efficiency
Suitable for a variety of automotive and industrial uses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±16V
On-Resistance (Rds(on)): 5.5mΩ @ 50A, 10V
Continuous Drain Current (Id): 50A @ 25°C
Input Capacitance (Ciss): 2330pF @ 25V
Power Dissipation (Tc): 56W
Quality and Safety Features
ROHS3 compliant
AEC-Q101 qualified for automotive use
Compatibility
Surface mount package (TO-252-3, D-Pak)
Compatible with a variety of automotive and industrial applications
Application Areas
Automotive electronics (e.g., motor drives, power supplies)
Industrial automation and control
Switch-mode power supplies
Inverters and converters
Product Lifecycle
Current product, no known discontinuation
Replacements and upgrades may be available from Infineon
Key Reasons to Choose This Product
Excellent performance and efficiency for high-power applications
Robust and reliable design for demanding environments
Automotive-grade qualification for use in vehicle systems
Wide operating temperature range for versatile applications
Optimized for fast switching and reduced power losses