Manufacturer Part Number
CY14B104NA-ZS45XI
Manufacturer
Infineon Technologies
Introduction
High-density 4Mbit Non-Volatile Static Random Access Memory (NVSRAM) with parallel interface and high-speed access.
Product Features and Performance
Non-Volatile SRAM technology
Fast access time of 45ns
Integrated high-reliability QuantumTrap technology
Unlimited read, write cycles
Automatic store on power-down with only a capacitor
10 years data retention without battery
Industrial temperature range
Product Advantages
Data retention without external battery
Robust against environmental conditions
Ideal for mission-critical applications
Low power consumption
Directly replaces volatile static RAM or battery-backed SRAM
Key Technical Parameters
Memory Size: 4Mbit
Organization: 256K x 16
Voltage Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Write Cycle Time: 45ns
Access Time: 45ns
Quality and Safety Features
High-reliability non-volatile storage
Data retention for over 10 years
Automatic data protection on power loss
Compatibility
Compatible with standard SRAM interfaces
Supports industrial standard 44-TSOP II surface mount package
Application Areas
Real-time systems
Industrial controls
Networking
Medical electronics
Automotive electronics
Product Lifecycle
Active product status
Long-term availability
Non-discontinued with support for future replacements
Key Reasons to Choose This Product
Reliable data storage without battery maintenance
Fast write and read operations for time-sensitive applications
Integration ease due to standard SRAM interface
Sustained performance across wide operating temperature range
Long-term commitment by Infineon Technologies for product support.