CY14B104N-BA45XC - Infineon Technologies

Manufacturer Part Number

CY14B104N-BA45XC

Manufacturer

infineon-technologies

Introduction

The CY14B104N-BA45XC is a 4Mbit Non-Volatile SRAM (NVSRAM) memory device from Infineon Technologies. It provides the functionality of a standard SRAM with the added benefit of non-volatile data retention, even when power is removed. This device is ideal for applications that require fast read/write access, data backup, and reliable data storage without the need for a battery backup.

Product Features and Performance

4Mbit memory capacity

256K x 16 memory organization

Parallel memory interface

45ns write cycle time and access time

7V to 3.6V operating voltage

0°C to 70°C operating temperature range

Surface mount 48-TFBGA package

Product Advantages

Provides non-volatile data storage without a battery backup

Fast read/write access speeds

Reliable data retention even in power-off conditions

Wide operating voltage and temperature ranges

Key Reasons to Choose This Product

Ideal for applications requiring fast and reliable data storage

Eliminates the need for battery backup, reducing system complexity and cost

Robust performance across a wide range of operating conditions

Backed by Infineon's reputation for quality and innovation

Quality and Safety Features

Industrially qualified for reliable operation

Compliant with relevant safety and environmental standards

Compatibility

The CY14B104N-BA45XC is a direct replacement for other NVSRAM devices with similar memory capacities and interface specifications.

Application Areas

Industrial automation and control systems

Medical equipment

Telecommunications equipment

Automotive electronics

Military and aerospace systems

Product Lifecycle

The CY14B104N-BA45XC is currently discontinued and nearing the end of its product lifecycle. Customers are advised to contact our website's sales team for information on equivalent or alternative models that may be available.