Manufacturer Part Number
CY14B104LA-ZS25XIT
Manufacturer
Infineon Technologies
Introduction
The CY14B104LA-ZS25XIT is a high-performance, non-volatile SRAM (NVSRAM) memory chip with a capacity of 4Mbit. It provides a parallel memory interface and offers fast access times and write cycle times, making it suitable for a variety of embedded applications that require reliable, non-volatile data storage.
Product Features and Performance
4Mbit of non-volatile memory capacity
512K x 8 memory organization
Parallel memory interface
25ns write cycle time (word/page)
25ns access time
7V to 3.6V operating voltage range
Operating temperature range of -40°C to 85°C
Product Advantages
Non-volatile data storage with fast read/write performance
Wide operating voltage and temperature range for versatile applications
Reliable and durable design for long-term use
Space-saving surface mount package
Key Reasons to Choose This Product
Excellent performance and reliability for critical data storage applications
Ease of integration into a wide range of embedded systems
Cost-effective solution for non-volatile memory requirements
Backed by Infineon's reputation for quality and innovation
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry safety and reliability standards
Robust design for long-term, reliable operation
Compatibility
The CY14B104LA-ZS25XIT is compatible with a variety of embedded systems and microcontrollers that require high-performance, non-volatile memory.
Application Areas
Industrial automation and control systems
Automotive electronics
Telecommunications equipment
Medical devices
Consumer electronics
Product Lifecycle
The CY14B104LA-ZS25XIT is an active product. There are no known equivalent or alternative models available at this time. If you have any further questions or need assistance, please contact our sales team through our website.