CY14B104N-ZS45XC - Infineon Technologies

Manufacturer Part Number

CY14B104N-ZS45XC

Manufacturer

infineon-technologies

Introduction

The CY14B104N-ZS45XC is a high-performance, low-power Non-Volatile SRAM (NVSRAM) memory device with a 4Mbit capacity and a 256K x 16 memory organization. It offers fast access time, wide voltage range, and extended temperature operation, making it suitable for a variety of applications.

Product Features and Performance

4Mbit Non-Volatile SRAM (NVSRAM) memory

256K x 16 memory organization

Parallel memory interface

45ns write cycle time (word/page)

45ns access time

Wide voltage range of 2.7V to 3.6V

Operating temperature range of 0°C to 70°C

Surface mount 44-TSOP (0.400", 10.16mm Width) package

Product Advantages

Combines the non-volatility of EEPROM/Flash with the fast read/write performance of SRAM

Eliminates the need for battery backup in volatile SRAM applications

Provides instant-on and instant-off capabilities

Supports unlimited read/write cycles

High endurance and data retention

Key Reasons to Choose This Product

Versatile NVSRAM solution for a wide range of applications

Reliable and long-lasting performance with non-volatile storage

Easy integration into systems due to standard parallel interface

Power-efficient operation with wide voltage range

Extended temperature range for harsh environments

Quality and Safety Features

Rigorous quality control and testing procedures

Compliance with industry safety and environmental standards

Compatibility

The CY14B104N-ZS45XC is compatible with a variety of microcontrollers, processors, and other digital systems with a parallel memory interface.

Application Areas

Industrial automation and control systems

Automotive electronics

Telecommunications equipment

Medical devices

Embedded systems

Product Lifecycle

The CY14B104N-ZS45XC is an obsolete product. Customers should contact our website's sales team for information on alternative or equivalent products that may be available.