Manufacturer Part Number
CY14B104NA-BA25XI
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance Non-Volatile SRAM (NVSRAM) from Infineon Technologies, designed for secure and fast data storage.
Product Features and Performance
High-speed SRAM with non-volatile storage
Fast access time of 25 ns
Write cycle time for word and page set at 25ns
Memory size of 4Mbit, organized as 256K x 16
Powered by a supply voltage of 2.7V to 3.6V
Operational across a wide temperature range of -40°C to 85°C
Product Advantages
No battery required for data retention
Instant non-volatile storage of data at power loss
Unlimited read and write endurance
High reliability and long data retention time
Key Technical Parameters
Memory Type: NVSRAM
Memory Format: NVSRAM
Memory Size: 4Mbit
Memory Organization: 256K x 16
Access Time: 25 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Quality and Safety Features
Designed with advanced technology for high reliability
Meets stringent industry quality and safety standards
Compatibility
Compatible with a wide range of microcontrollers and processors
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Application Areas
Suitable for critical data storage in industrial, medical, automotive, and telecommunications
Used in applications requiring quick access to data and data retention upon power loss
Product Lifecycle
The product status is active, indicating ongoing production and availability
No indication of nearing discontinuation, ensuring long-term availability
Several Key Reasons to Choose This Product
Reliable data storage without the need for external batteries
Fast access time and write cycle, enhancing application performance
Robust data retention and endurance capabilities
Broad compatibility and easy integration into existing systems
Active product lifecycle status with no current discontinuation concerns, ensuring long-term support and availability