CY14B108L-ZS20XI - Infineon Technologies

Manufacturer Part Number

CY14B108L-ZS20XI

Manufacturer

Infineon Technologies

Introduction

This product is an 8-Mbit Non-Volatile SRAM (NVSRAM) integrated circuit from Infineon Technologies.

Product Features and Performance

Parallel interface NVSRAM with 20ns access time

1M x 8 memory organization

7V to 3.6V operating voltage range

Wide operating temperature range of -40°C to 85°C

Robust data retention of up to 20 years

Product Advantages

Non-volatile memory retains data without power

Fast access time for real-time applications

Wide voltage and temperature range for versatile use

Compact 44-TSOP II package for space-saving designs

Key Technical Parameters

Memory Size: 8Mbit

Memory Interface: Parallel

Write Cycle Time: 20ns

Memory Organization: 1M x 8

Memory Format: NVSRAM

Quality and Safety Features

RoHS3 compliant

Reliable performance and long-term data retention

Compatibility

44-TSOP (0.400", 10.16mm Width) package

Surface mount design

Application Areas

Industrial automation and control systems

Embedded systems

Portable devices

Military and aerospace electronics

Product Lifecycle

This product is currently in active production

Replacement or upgrade options may be available from Infineon Technologies

Several Key Reasons to Choose This Product

Non-volatile memory with fast access time and low power consumption

Wide operating temperature range for rugged environments

Compact surface mount package for space-constrained designs

Reliable performance and long-term data retention

RoHS3 compliance for environmental responsibility