CY14B108N-BA45XIT - Infineon Technologies

Manufacturer Part Number

CY14B108N-BA45XIT

Manufacturer

Infineon Technologies

Introduction

The CY14B108N-BA45XIT is a high-performance Non-Volatile SRAM designed by Infineon Technologies with a memory capacity of 8Mbit, configured as 512K x 16, which stores data in a non-volatile manner.

Product Features and Performance

Memory Type: Non-Volatile SRAM (NVSRAM)

Memory Format: NVSRAM

Memory Size: 8Mbit

Memory Organization: 512K x 16

Memory Interface: Parallel

Write Cycle Time - Word, Page: 45ns

Access Time: 45 ns

Voltage - Supply: 2.7V to 3.6V

Operating Temperature: -40°C to 85°C

Mounting Type: Surface Mount

Package / Case: 48-TFBGA

Product Advantages

Retains data without power

Immediate write with no delay

Offers high reliability and durability

Key Technical Parameters

Memory Size: 8Mbit

Access Time: 45ns

Operating Temperature Range: -40°C to 85°C

Voltage Range: 2.7V to 3.6V

Quality and Safety Features

Operates reliably within industrial temperature ranges

Built to handle robust applications, ensuring data integrity and safety

Compatibility

Compatible with systems requiring non-volatile memory with fast access and write times in a parallel interface

Application Areas

Industrial automation systems

Robotics

Automotive electronics

Data logging systems

Product Lifecycle

Current Status: Active

Not nearing discontinuation

Availability of replacements or upgrades can be periodically reviewed as technology advances

Several Key Reasons to Choose This Product

Fast access and write time of 45ns enhances system performance

Robust temperature range ensures performance in extreme conditions

High reliability for critical data storage and retrieval in industrial applications

Non-volatile storage maintains data integrity even without power

Broad compatibility with various industrial and automotive systems