CY14B108N-BA45XI - Infineon Technologies

Manufacturer Part Number

CY14B108N-BA45XI

Manufacturer

Infineon Technologies

Introduction

High-speed 8Mbit Non-Volatile SRAM with parallel interface

Product Features and Performance

8Mbit NVSRAM with 512K x 16 organization

45ns read and write cycle time

Non-volatile elements for data retention

Supports parallel interface for high-speed data access

Operates across 2.7V ~ 3.6V supply voltage range

Available in 48-TFBGA package for surface mount

Product Advantages

Retains data without a battery

Provides high-speed data access

Reliable data retention for critical applications

Key Technical Parameters

Memory Type: Non-Volatile

Memory Format: NVSRAM (Non-Volatile SRAM)

Memory Size: 8Mbit

Memory Organization: 512K x 16

Write Cycle Time: 45ns

Access Time: 45ns

Voltage - Supply Range: 2.7V ~ 3.6V

Operating Temperature Range: -40°C ~ 85°C

Quality and Safety Features

Designed for high reliability and endurance

Extended temperature range support for demanding environments

Compatibility

Compatible with standard parallel memory interfaces

Mounting Type: Surface Mount

Application Areas

Industrial control systems

Networking equipment

Medical devices

Automotive electronics

Product Lifecycle

Product Status: Active

Offering long-term availability

Key Reasons to Choose This Product

Large 8Mbit capacity for extensive data storage

Quick access time and write cycle for high-speed applications

Non-volatile storage eliminates the need for a battery backup

Robust operating temperature range for versatile usage

High-reliability SRAM technology from a trusted manufacturer

Suitable for a wide range of industrial and commercial applications