Manufacturer Part Number
CY14B108M-ZSP45XI
Manufacturer
Infineon Technologies
Introduction
High-performance non-volatile SRAM (NVSRAM) with parallel interface
Combines the best features of SRAM and EEPROM/Flash memory
Product Features and Performance
Provides true non-volatile storage with zero standby power
High-speed parallel interface with fast access times of 45ns
Large memory capacity of 8Mbit (512K x 16)
Wide operating voltage range of 2.7V to 3.6V
Extended operating temperature range of -40°C to +85°C
Product Advantages
Seamless transition between non-volatile and volatile memory modes
Eliminates the need for battery backup
Robust data retention of over 20 years
Endurance of over 1 million write cycles
Key Technical Parameters
Memory Type: Non-Volatile SRAM (NVSRAM)
Memory Size: 8Mbit (512K x 16)
Access Time: 45ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to +85°C
Quality and Safety Features
RoHS3 compliant
Qualified to automotive standards
Robust data integrity with error detection and correction
Compatibility
Compatible with a wide range of microcontrollers and processors
Application Areas
Industrial automation
Automotive electronics
Telecommunications equipment
Medical devices
Consumer electronics
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacements and upgrades available as needed
Several Key Reasons to Choose This Product
Seamless non-volatile storage with no battery backup required
High-speed parallel interface for fast data access
Large memory capacity for data-intensive applications
Wide operating temperature range for harsh environments
Robust data integrity and long-term reliability
Automotive and industrial-grade quality and safety features