Manufacturer Part Number
CY14B108K-ZS45XI
Manufacturer
Infineon Technologies
Introduction
This is a high-performance, non-volatile SRAM (NVSRAM) integrated circuit from Infineon Technologies.
Product Features and Performance
8Mbit of non-volatile SRAM memory
45ns access time
Supports a wide operating temperature range of -40°C to 85°C
7V to 3.6V supply voltage
Parallel memory interface
Product Advantages
Non-volatile storage of data without the need for a battery backup
Fast access time for real-time applications
Wide temperature range for industrial and automotive use
Low power consumption
Key Technical Parameters
Memory Size: 8Mbit
Memory Organization: 1M x 8
Memory Interface: Parallel
Write Cycle Time (Word, Page): 45ns
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
44-TSOP II package for surface mount
Compatibility
Suitable for a variety of embedded systems and industrial applications
Application Areas
Industrial automation
Transportation systems
Medical equipment
Instrumentation
Product Lifecycle
This product is currently in production and not nearing discontinuation
Replacement or upgrade options may be available from Infineon Technologies
Key Reasons to Choose This Product
High-performance non-volatile SRAM with fast access time
Wide operating temperature range for industrial and automotive use
Low power consumption
RoHS3 compliance for environmental friendliness
Supported by a reputable manufacturer, Infineon Technologies