CY14B116N-ZSP25XI - Infineon Technologies

Manufacturer Part Number

CY14B116N-ZSP25XI

Manufacturer

Infineon Technologies

Introduction

CY14B116N-ZSP25XI is a high-performance Non-Volatile Static Random Access Memory (NVSRAM) device from Infineon Technologies designed for a wide range of applications that require high-speed data acquisition and storage with non-volatility.

Product Features and Performance

High endurance Non-Volatile Static RAM

Rapid access and write cycle times

Non-volatility without battery support

Instantaneous non-volatile storage via external signal

Unlimited read and write cycles

Access Time 25 ns

Product Advantages

Retains data without power

High-speed operation comparable to volatile SRAM

Reliable data retention for critical applications

Direct compatibility with standard SRAM interface

No delay for data recalls

Key Technical Parameters

Memory Size 16Mbit

Memory Organization 1M x 16

Write Cycle Time - Word, Page 25ns

Voltage - Supply 2.7V ~ 3.6V

Operating Temperature -40°C ~ 85°C (TA)

Quality and Safety Features

Automotive-grade memory product

Data retention in the absence of power

Robust functionality across a broad temperature range

Compatibility

Interface compatible with most microprocessors

Surface Mount 54-TSOP II package compatible with standard PCB layouts

Application Areas

Industrial control systems

Networking equipment

Medical electronics

Automotive electronics

Data storage devices

Product Lifecycle

Active product life cycle

Indications of continued manufacturer support

Availability of replacements indicated by base product number

Several Key Reasons to Choose This Product

Non-volatility ensures data integrity during power loss

No need for battery backup systems

High-speed parallel interface ensures compatibility with existing architectures

Substantial data storage capabilities with 16Mbit capacity

Durable construction with a broad operating temperature range

Infineon Technologies’ reputation for high-quality and reliable products