Manufacturer Part Number
CY14B116N-ZSP25XI
Manufacturer
Infineon Technologies
Introduction
CY14B116N-ZSP25XI is a high-performance Non-Volatile Static Random Access Memory (NVSRAM) device from Infineon Technologies designed for a wide range of applications that require high-speed data acquisition and storage with non-volatility.
Product Features and Performance
High endurance Non-Volatile Static RAM
Rapid access and write cycle times
Non-volatility without battery support
Instantaneous non-volatile storage via external signal
Unlimited read and write cycles
Access Time 25 ns
Product Advantages
Retains data without power
High-speed operation comparable to volatile SRAM
Reliable data retention for critical applications
Direct compatibility with standard SRAM interface
No delay for data recalls
Key Technical Parameters
Memory Size 16Mbit
Memory Organization 1M x 16
Write Cycle Time - Word, Page 25ns
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Quality and Safety Features
Automotive-grade memory product
Data retention in the absence of power
Robust functionality across a broad temperature range
Compatibility
Interface compatible with most microprocessors
Surface Mount 54-TSOP II package compatible with standard PCB layouts
Application Areas
Industrial control systems
Networking equipment
Medical electronics
Automotive electronics
Data storage devices
Product Lifecycle
Active product life cycle
Indications of continued manufacturer support
Availability of replacements indicated by base product number
Several Key Reasons to Choose This Product
Non-volatility ensures data integrity during power loss
No need for battery backup systems
High-speed parallel interface ensures compatibility with existing architectures
Substantial data storage capabilities with 16Mbit capacity
Durable construction with a broad operating temperature range
Infineon Technologies’ reputation for high-quality and reliable products
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