Manufacturer Part Number
NTGS5120PT1G
Manufacturer
onsemi
Introduction
The NTGS5120PT1G is a P-channel MOSFET transistor from onsemi, designed for a variety of power management and switching applications.
Product Features and Performance
60V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
111mΩ On-Resistance (Rds(on)) at 2.9A, 10V
8A Continuous Drain Current (Id) at 25°C
942pF Input Capacitance (Ciss) at 30V
600mW Power Dissipation at 25°C
Operating Temperature Range: -55°C to 150°C
Product Advantages
Low on-resistance for efficient power handling
High voltage rating for a wide range of applications
Small SOT-23-6 package for compact designs
Surface mount for automated assembly
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
3V Gate Threshold Voltage (Vgs(th)) at 250μA
5V to 10V Drive Voltage Range
1nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 Compliant
Tape and Reel Packaging
Compatibility
This MOSFET is compatible with a wide range of power management and switching applications, including DC-DC converters, motor drives, and power supplies.
Application Areas
Power management
Motor control
Switching circuits
Power supplies
Product Lifecycle
The NTGS5120PT1G is an active product from onsemi, with no indication of discontinuation. Replacement or upgrade options may be available from onsemi as technology advances.
Key Reasons to Choose This Product
Efficient power handling due to low on-resistance
Wide voltage and temperature range for versatility
Compact surface-mount package for space-constrained designs
Reliable performance and quality due to onsemi manufacturing
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