Manufacturer Part Number
NTGS4141NT1G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor suitable for various power management and switching applications.
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
Low on-resistance of 25 milliohms @ 7A, 10V
High drain-to-source voltage of 30V
Low input capacitance of 560pF @ 24V
Maximum continuous drain current of 3.5A at 25°C
Product Advantages
Excellent thermal performance for efficient power handling
Low on-resistance for low power loss
High voltage handling capability
Small footprint SOT-23-6 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 25 milliohms
Continuous Drain Current (Id): 3.5A
Input Capacitance (Ciss): 560pF
Power Dissipation (Pd): 500mW
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Switching circuits
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent thermal performance and low power loss
High voltage and current handling capabilities
Small and compact SOT-23-6 package
RoHS3 compliance for environmental safety
Broad application compatibility
NTGS3441T1G MOSAMI Semiconductor/onsemi