NTGS3455T1G - onsemi

Manufacturer Part Number

NTGS3455T1G

Manufacturer

onsemi

Introduction

The NTGS3455T1G is a P-channel power MOSFET transistor from onsemi. It is designed for use in a variety of power management and switching applications.

Product Features and Performance

30V Drain-Source Voltage (Vdss)

±20V Maximum Gate-Source Voltage (Vgs)

100 mOhm Maximum On-Resistance (Rds(on)) at 3.5A, 10V

5A Continuous Drain Current (Id) at 25°C

480 pF Maximum Input Capacitance (Ciss) at 5V

500 mW Maximum Power Dissipation at 25°C

-55°C to 150°C Operating Temperature Range

Product Advantages

Low on-resistance for efficient power handling

Wide operating voltage and temperature range

Small surface-mount package for compact designs

Key Technical Parameters

MOSFET Technology

P-Channel FET Type

3V Maximum Gate Threshold Voltage (Vgs(th)) at 250 μA

5V to 10V Drive Voltage Range

Quality and Safety Features

RoHS3 Compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power management

Switching applications

Motor controls

Battery charging and discharging

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Excellent power efficiency and low on-resistance

Wide operating voltage and temperature range

Small, space-saving surface-mount package

High-quality and RoHS-compliant design

Suitable for a variety of power management and switching applications