Manufacturer Part Number
NTGS3441T1G
Manufacturer
onsemi
Introduction
The NTGS3441T1G is a P-channel enhancement-mode MOSFET transistor from onsemi. It is designed for power management and switching applications.
Product Features and Performance
P-channel enhancement-mode MOSFET
Low on-resistance (Rds(on)) of 90 mΩ
High current handling capability of 1.65 A (continuous drain current at 25°C)
Wide operating temperature range from -55°C to 150°C
Low input capacitance (Ciss) of 480 pF
Low gate charge (Qg) of 14 nC
Product Advantages
Efficient power management due to low Rds(on)
Compact SOT-23-6 package for space-constrained designs
Wide operating temperature range suitable for diverse applications
Low input capacitance and gate charge enable fast switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate to Source Voltage (Vgs): ±8 V
Threshold Voltage (Vgs(th)): 1.5 V
Power Dissipation (Ptot): 500 mW
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
The NTGS3441T1G is compatible with various power management and switching applications, including:
DC-DC converters
Motor drives
Switching power supplies
Battery charging circuits
Application Areas
Power management
Switching circuits
Battery-powered devices
Industrial and consumer electronics
Product Lifecycle
The NTGS3441T1G is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Efficient power management with low on-resistance
Compact SOT-23-6 package for space-constrained designs
Wide operating temperature range for diverse applications
Fast switching capability with low input capacitance and gate charge
RoHS3 compliance for environmental responsibility