NTGS3136PT1G - onsemi

Manufacturer Part Number

NTGS3136PT1G

Manufacturer

onsemi

Introduction

The NTGS3136PT1G is a P-channel enhancement-mode MOSFET transistor designed for use in power management and switching applications.

Product Features and Performance

Low on-resistance (Rds(on)) of 33 mΩ at 5.1 A, 4.5 V

High current capability of 3.7 A continuous drain current at 25°C

Fast switching capability with low gate charge of 29 nC at 4.5 V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent power efficiency due to low on-resistance

Compact surface-mount SOT-23-6 package

Suitable for high-frequency switching applications

Robust design for reliable operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20 V

Gate-to-Source Voltage (Vgs): ±8 V

Input Capacitance (Ciss): 1901 pF at 10 V

Power Dissipation (Max): 700 mW

Quality and Safety Features

RoHS3 compliant

Halogen-free and lead-free construction

Compatibility

Suitable for use in a wide range of power management and switching applications

Application Areas

Power supplies

DC-DC converters

Motor drives

Battery chargers

Industrial and consumer electronics

Product Lifecycle

Current product, no discontinuation planned

Replacement parts and upgrades available

Key Reasons to Choose This Product

Excellent power efficiency and high current handling capability

Compact surface-mount package for space-constrained designs

Robust design for reliable operation in a wide temperature range

Suitable for high-frequency switching applications

RoHS3 compliance and halogen-free construction for environmental responsibility