Manufacturer Part Number
NTGD4161PT1G
Manufacturer
onsemi
Introduction
Dual P-channel MOSFET in a SOT-23-6 package
Product Features and Performance
Suitable for power management and motor control applications
Optimized for high-frequency switching
Low on-resistance (160 mΩ) for efficient power conversion
Low input capacitance (281 pF) for fast switching
Product Advantages
Compact SOT-23-6 package
Logic-level gate for easy drive
Wide operating temperature range (-55°C to 150°C)
Reliable MOSFET technology
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Continuous drain current (Id): 1.5A
On-resistance (Rds(on)): 160 mΩ
Input capacitance (Ciss): 281 pF
Gate threshold voltage (Vgs(th)): 3V
Gate charge (Qg): 7.1 nC
Quality and Safety Features
Robust design for reliable operation
Compliant with relevant safety standards
Compatibility
Surface mount design for easy integration
Suitable for a variety of power management and motor control applications
Application Areas
Power management circuits
Motor control systems
Lighting and LED driver circuits
Battery-powered devices
Product Lifecycle
Current production model
Replacements or upgrades may be available in the future
Several Key Reasons to Choose This Product
Compact and efficient power management solution
Optimized for high-frequency switching
Wide operating temperature range for versatile applications
Reliable MOSFET technology for long-term performance
NTGS3130NAMI Semiconductor/onsemi