Manufacturer Part Number
NTGD3149CT1G
Manufacturer
onsemi
Introduction
High-performance dual N-channel and P-channel MOSFET array
Product Features and Performance
Efficient power switching
High current handling capability
Fast switching speed
Low on-resistance
Low gate charge
Product Advantages
Compact size for space-constrained applications
Integrated dual MOSFET design reduces component count
Improved thermal performance
Reliable operation in harsh environments
Key Technical Parameters
Operating Temperature: -55°C to 150°C
Power Rating: 900mW
Drain-to-Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 60mΩ
Continuous Drain Current (Id): 3.2A (N-channel), 2.4A (P-channel)
Input Capacitance (Ciss): 387pF
Gate Threshold Voltage (Vgs(th)): 1V
Gate Charge (Qg): 5.5nC
Quality and Safety Features
ESD protection
Over-temperature protection
Robust package design for reliable operation
Compatibility
Compatible with various electronic circuits and systems requiring high-performance, dual MOSFET switching
Application Areas
Power management circuits
Motor control
Battery management
Industrial automation
Telecommunications equipment
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options available
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Compact, space-saving design
Reliable operation in harsh environments
Integrated dual MOSFET configuration simplifies circuit design
Cost-effective solution for high-performance power switching applications
NTGD4167PT1GAMI Semiconductor/onsemi