NTGD4167CT1G - onsemi

Manufacturer Part Number

NTGD4167CT1G

Manufacturer

onsemi

Introduction

N-channel and P-channel dual MOSFET array in a small SOT-23-6 package

Product Features and Performance

Capable of handling up to 2.6A continuous drain current per channel

Low on-resistance down to 90mΩ

High switching speed with low input capacitance of 295pF

Logic-level gate with low threshold voltage of 1.5V

Supports operating temperatures from -55°C to 150°C

Product Advantages

Compact dual MOSFET design for space-constrained applications

High power density and efficiency

Fast switching for improved circuit performance

Reliable operation across wide temperature range

Key Technical Parameters

30V drain-to-source voltage

900mW maximum power dissipation

5nC maximum gate charge

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging for automated assembly

Compatibility

Suitable for a wide range of electronic applications requiring dual MOSFET functionality

Application Areas

Switching power supplies

Motor control circuits

Industrial and consumer electronics

Product Lifecycle

Current production model, no plans for discontinuation

Replacement parts and upgrades available as needed

Key Reasons to Choose This Product

High current-handling capability and low on-resistance for efficient power conversion

Compact package and dual MOSFET design enable space-saving circuit designs

Wide operating temperature range and reliable performance

Ease of integration and automated assembly with tape and reel packaging