NTGD3148NT1G - onsemi

Manufacturer Part Number

NTGD3148NT1G

Manufacturer

onsemi

Introduction

Dual N-Channel MOSFET with logic-level gate drive in a small SOT-23-6 package

Product Features and Performance

Operating temperature range of -50°C to 150°C

Power rating of 900mW

Drain-to-source voltage (Vdss) of 20V

Low on-resistance (Rds(on)) of 70mΩ at 3.5A and 4.5V gate-to-source voltage

Input capacitance (Ciss) of 300pF at 10V drain-to-source voltage

Gate threshold voltage (Vgs(th)) of 1.5V at 250µA drain current

Gate charge (Qg) of 3.8nC at 4.5V gate-to-source voltage

Product Advantages

Compact SOT-23-6 package

Logic-level gate drive

Suitable for space-constrained applications

Reliable performance over wide temperature range

Key Technical Parameters

Dual N-Channel MOSFET configuration

20V drain-to-source voltage

70mΩ maximum on-resistance

3A continuous drain current at 25°C

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Suitable for power management, switching, and control applications in consumer electronics, industrial equipment, and automotive systems

Product Lifecycle

Currently in production

No plans for discontinuation or replacement announced

Several Key Reasons to Choose This Product

Compact and space-saving package

Excellent thermal performance and wide temperature range

Low on-resistance for efficient power switching

Logic-level gate drive for easy interfacing with control circuitry

Reliable and robust design for industrial and automotive applications