Manufacturer Part Number
NTGS3130NT1G
Manufacturer
onsemi
Introduction
N-channel enhancement-mode power MOSFET in a surface-mount package
Product Features and Performance
Designed for general-purpose switching and amplifier applications
Low on-resistance for high efficiency
Fast switching speed
High power density
Rugged and reliable design
Product Advantages
Low on-resistance for high efficiency
Fast switching speed for high-frequency applications
Small package size for compact designs
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate-to-Source Voltage (Vgs): ±8 V
On-Resistance (Rds(on)): 24 mΩ @ 5.6 A, 4.5 V
Continuous Drain Current (Id): 4.23 A @ 25°C
Input Capacitance (Ciss): 935 pF @ 16 V
Power Dissipation (Max): 600 mW
Quality and Safety Features
RoHS3 compliant
Meets industrial-grade quality and reliability standards
Compatibility
Compatible with various electronic circuits and systems
Application Areas
General-purpose switching and amplifier applications
Power supply circuits
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades available from the manufacturer
Key Reasons to Choose This Product
High efficiency and low on-resistance for improved system performance
Fast switching speed for high-frequency applications
Small package size for compact design
Wide operating temperature range for versatile use
Robust and reliable design for long-term operation
NTGS3136PT1G MOSAMI Semiconductor/onsemi