Manufacturer Part Number
NTGS3441T1
Manufacturer
onsemi
Introduction
This is a P-channel MOSFET transistor from onsemi.
Product Features and Performance
MOSFET transistor with P-channel
Operating temperature range of -55°C to 150°C
Drain-to-source voltage (Vdss) of 20V
Maximum gate-to-source voltage (Vgs) of ±8V
On-state resistance (Rds(on)) of 90mΩ @ 3.3A, 4.5V
Continuous drain current (Id) of 1.65A at 25°C
Input capacitance (Ciss) of 480pF @ 5V
Power dissipation of 500mW at 25°C
Gate threshold voltage (Vgs(th)) of 1.5V @ 250μA
Gate charge (Qg) of 14nC @ 4.5V
Product Advantages
Low on-state resistance for efficient power switching
Wide operating temperature range
Suitable for various power management and switching applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Gate-to-source voltage (Vgs): ±8V
On-state resistance (Rds(on)): 90mΩ @ 3.3A, 4.5V
Continuous drain current (Id): 1.65A at 25°C
Input capacitance (Ciss): 480pF @ 5V
Power dissipation: 500mW at 25°C
Gate threshold voltage (Vgs(th)): 1.5V @ 250μA
Gate charge (Qg): 14nC @ 4.5V
Quality and Safety Features
RoHS non-compliant
Compatibility
Surface mount (SMT) compatible
Application Areas
Power management
Switching applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available in the future.
Several Key Reasons to Choose This Product
Low on-state resistance for efficient power switching
Wide operating temperature range (-55°C to 150°C)
Suitable for various power management and switching applications
Surface mount (SMT) compatible
NTGS3136PONsemi