Manufacturer Part Number
NTGS3443T1G
Manufacturer
onsemi
Introduction
The NTGS3443T1G is a P-channel, enhancement-mode power MOSFET from onsemi. It is designed for use in a variety of power management and switching applications.
Product Features and Performance
P-channel MOSFET with a drain-to-source voltage (Vdss) of 20V
Low on-resistance (Rds(on)) of 65mΩ at 4.4A and 4.5V gate voltage
Continuous drain current (Id) of 2.2A at 25°C
Input capacitance (Ciss) of 565pF at 5V drain-to-source voltage
Power dissipation of 500mW at 25°C ambient temperature
Operating temperature range of -55°C to 150°C
Product Advantages
Optimized for efficient power management and switching
Low on-resistance for low conduction losses
High drain current capability
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 65mΩ
Continuous Drain Current (Id): 2.2A
Input Capacitance (Ciss): 565pF
Power Dissipation: 500mW
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
The NTGS3443T1G is compatible with a variety of power management and switching applications, including:
DC-DC converters
Motor drives
Power supplies
Lighting control
Battery chargers
Application Areas
Power management
Switching
Motor control
Power supplies
Lighting control
Battery chargers
Product Lifecycle
The NTGS3443T1G is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from onsemi, depending on the specific application requirements.
Key Reasons to Choose This Product
Optimized for efficient power management and switching
Low on-resistance for low conduction losses
High drain current capability
Wide operating temperature range
RoHS3 compliant
Compatibility with a variety of power management and switching applications
NTGS34433T1GAMI Semiconductor/onsemi