Manufacturer Part Number
NTGS4111PT1G
Manufacturer
onsemi
Introduction
P-Channel Enhancement Mode MOSFET Transistor
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Drain-to-Source Voltage (Vdss): 30V
Maximum Gate-to-Source Voltage (Vgs): ±20V
Maximum On-Resistance (Rds(on)): 60mΩ @ 3.7A, 10V
Continuous Drain Current (Id): 2.6A
Input Capacitance (Ciss): 750pF @ 15V
Power Dissipation (Ta): 630mW
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range
High drain-to-source voltage rating
Suitable for various power management applications
Key Technical Parameters
MOSFET Technology: P-Channel Enhancement Mode
Package: SOT-23-6 Thin, TSOT-23-6
RoHS Compliance: RoHS3 Compliant
Quality and Safety Features
Robust design for reliable performance
Compliant with RoHS3 environmental standards
Compatibility
Surface mount package for easy PCB integration
Application Areas
Power management circuits
Switching power supplies
Motor control
Battery chargers
General-purpose power switching
Product Lifecycle
Currently available, no discontinuation planned
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
Wide operating temperature range for diverse applications
Compact surface mount package for space-constrained designs
RoHS3 compliance for environmentally-friendly use
Reliable and robust design for long-term reliable operation
NTGS3441T1G MOSAMI Semiconductor/onsemi