Manufacturer Part Number
NTGS4111PT1
Manufacturer
onsemi
Introduction
This is a P-Channel MOSFET transistor from onsemi.
Product Features and Performance
P-Channel MOSFET design
SOT-23-6 Thin, TSOT-23-6 package
Operate in the temperature range of -55°C to 150°C
30V drain-to-source voltage (Vdss)
Maximum gate-to-source voltage (Vgs) of ±20V
Low on-resistance (Rds(on)) of 60mOhm @ 3.7A, 10V
Continuous drain current (Id) of 2.6A at 25°C
Input capacitance (Ciss) of 750pF @ 15V
Maximum power dissipation of 630mW at 25°C
Product Advantages
Efficient power handling with low on-resistance
Wide operating temperature range
Compact and space-saving surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mOhm @ 3.7A, 10V
Continuous Drain Current (Id): 2.6A @ 25°C
Input Capacitance (Ciss): 750pF @ 15V
Power Dissipation (Max): 630mW @ 25°C
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for a variety of electronic applications that require a P-Channel MOSFET transistor
Application Areas
Power management circuits
Switching applications
Motor control
Battery charging and discharging
Industrial and consumer electronics
Product Lifecycle
Current production model, no discontinuation or replacement plans identified
Several Key Reasons to Choose This Product
Efficient power handling with low on-resistance
Wide operating temperature range of -55°C to 150°C
Compact and space-saving surface mount package
Suitable for a variety of electronic applications requiring a P-Channel MOSFET transistor
NTGS3441T1G MOSAMI Semiconductor/onsemi