Manufacturer Part Number
NTGS3443T1
Manufacturer
onsemi
Introduction
The NTGS3443T1 is a P-channel enhancement-mode MOSFET transistor designed for power management and switching applications. It offers low on-resistance and high switching speed, making it suitable for a variety of power control and conversion circuits.
Product Features and Performance
P-channel enhancement-mode MOSFET
Low on-resistance (65 mΩ max. at 4.4 A, 4.5 V)
High switching speed
Continuous drain current of 2.2 A at 25°C
Wide operating temperature range of -55°C to 150°C
Input capacitance of 565 pF max. at 5 V
Power dissipation of 500 mW max. at 25°C
Product Advantages
Efficient power management and switching
Compact surface-mount package (SOT-23-6)
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20 V
Gate-to-Source Voltage (Vgs): ±12 V
Threshold Voltage (Vgs(th)): 1.5 V max. at 250 μA
Drive Voltage (max. Rds(on), min. Rds(on)): 2.5 V, 4.5 V
Quality and Safety Features
RoHS non-compliant
Manufacturer's packaging: 6-TSOP
Compatibility
The NTGS3443T1 is compatible with a variety of power management and switching applications.
Application Areas
Power management circuits
Power conversion and control
Switching applications
Product Lifecycle
The NTGS3443T1 is an active product and is currently available.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
Compact and versatile surface-mount package
Wide operating temperature range
Suitable for a variety of power management and control applications