NDD03N60ZT4G - onsemi

Manufacturer Part Number

NDD03N60ZT4G

Manufacturer

onsemi

Introduction

This is a discrete semiconductor product, specifically a single N-channel MOSFET transistor.

Product Features and Performance

High drain-to-source voltage of 600V

Low on-resistance of 3.6Ω at 1.2A and 10V

Operating temperature range of -55°C to 150°C

Continuous drain current of 2.6A at 25°C

Input capacitance of 312pF at 25V

Maximum power dissipation of 61W at Tc

Gate charge of 12nC at 10V

Product Advantages

Suitable for high-voltage, high-power applications

Low on-resistance for improved efficiency

Wide operating temperature range

Surface mount packaging for compact designs

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs) Max: ±30V

On-Resistance (Rds(on)): 3.6Ω @ 1.2A, 10V

Continuous Drain Current (Id): 2.6A at 25°C

Input Capacitance (Ciss): 312pF at 25V

Power Dissipation (Max): 61W at Tc

Quality and Safety Features

MOSFET technology for reliable performance

DPAK surface mount package for thermal management

Compatibility

Compatible with high-voltage, high-power applications

Application Areas

Switching power supplies

Motor drives

Lighting ballasts

Industrial and consumer electronics

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

High voltage and power handling capability

Low on-resistance for improved efficiency

Wide operating temperature range

Surface mount packaging for compact designs

Reliable MOSFET technology