NDD03N80ZT4G - onsemi

Manufacturer Part Number

NDD03N80ZT4G

Manufacturer

onsemi

Introduction

High-voltage, high-performance N-Channel MOSFET in a DPAK-3 package.

Product Features and Performance

800V Drain-to-Source Voltage (Vdss)

±30V Gate-to-Source Voltage (Vgs)

5Ω Maximum On-Resistance (Rds(on)) at 1.2A, 10V

9A Continuous Drain Current (Id) at 25°C

440pF Maximum Input Capacitance (Ciss) at 25V

96W Maximum Power Dissipation at Tc

Product Advantages

High voltage and current handling capability

Low on-resistance for efficient power conversion

Small DPAK-3 surface-mount package

Key Technical Parameters

MOSFET Technology

N-Channel FET Type

5V Maximum Gate Threshold Voltage (Vgs(th)) at 50A

10V Drive Voltage Range for Rds(on) Optimization

17nC Maximum Gate Charge (Qg) at 10V

Quality and Safety Features

-55°C to 150°C Operating Temperature Range

Compliant with RoHS and other relevant safety standards

Compatibility

This MOSFET is suitable for a wide range of power conversion, motor control, and switching applications.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

The NDD03N80ZT4G is an active product and not nearing discontinuation. Replacement or upgrade options may be available from onsemi as technology evolves.

Key Reasons to Choose This Product

Excellent high-voltage and high-current handling capability

Low on-resistance for efficient power conversion

Small surface-mount DPAK-3 package for compact designs

Wide operating temperature range for versatile applications

Compliance with relevant safety and environmental standards