NDD03N60Z-1G - onsemi

Manufacturer Part Number

NDD03N60Z-1G

Manufacturer

onsemi

Introduction

The NDD03N60Z-1G is a discrete N-Channel MOSFET transistor from onsemi, suitable for a variety of power electronics and switching applications.

Product Features and Performance

High voltage rating of 600V

Continuous drain current of 2.6A at 25°C

Low on-resistance of 3.6Ω at 1.2A, 10V

Wide operating temperature range of -55°C to 150°C

Input capacitance of 312pF at 25V

Power dissipation of 61W at Tc

Product Advantages

Reliable and robust construction

High efficiency due to low on-resistance

Suitable for high voltage and high power applications

Wide operating temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 600V

Gate to Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 3.6Ω at 1.2A, 10V

Continuous Drain Current (Id): 2.6A at 25°C

Input Capacitance (Ciss): 312pF at 25V

Power Dissipation (Pd): 61W at Tc

Quality and Safety Features

Robust and reliable design

Complies with industry safety standards

Compatibility

Suitable for a wide range of power electronic circuits and applications

Application Areas

Power supplies

Motor drives

Switching power converters

Industrial automation

Lighting controls

Product Lifecycle

Currently available and not nearing discontinuation

Replacement or upgrade options may be available from onsemi

Key Reasons to Choose This Product

High voltage and current handling capabilities

Low on-resistance for efficient operation

Wide operating temperature range

Reliable and robust construction

Suitable for a variety of power electronics applications