Manufacturer Part Number
NDD03N60Z-1G
Manufacturer
onsemi
Introduction
The NDD03N60Z-1G is a discrete N-Channel MOSFET transistor from onsemi, suitable for a variety of power electronics and switching applications.
Product Features and Performance
High voltage rating of 600V
Continuous drain current of 2.6A at 25°C
Low on-resistance of 3.6Ω at 1.2A, 10V
Wide operating temperature range of -55°C to 150°C
Input capacitance of 312pF at 25V
Power dissipation of 61W at Tc
Product Advantages
Reliable and robust construction
High efficiency due to low on-resistance
Suitable for high voltage and high power applications
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.6Ω at 1.2A, 10V
Continuous Drain Current (Id): 2.6A at 25°C
Input Capacitance (Ciss): 312pF at 25V
Power Dissipation (Pd): 61W at Tc
Quality and Safety Features
Robust and reliable design
Complies with industry safety standards
Compatibility
Suitable for a wide range of power electronic circuits and applications
Application Areas
Power supplies
Motor drives
Switching power converters
Industrial automation
Lighting controls
Product Lifecycle
Currently available and not nearing discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient operation
Wide operating temperature range
Reliable and robust construction
Suitable for a variety of power electronics applications
NDD03N60ZT4GonsemiMOSFET N-CH 600V 2.6A DPAK